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DG2535DQ-T1-E3 Datasheet(PDF) 2 Page - Vishay Siliconix |
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DG2535DQ-T1-E3 Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 7 page www.vishay.com 2 Document Number: 72939 S-71009-Rev. E, 14-May-07 Vishay Siliconix DG2535/DG2536 Notes: a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 4.0 mW/°C above 70 °C d. Derate 14.9 mW/°C above 70 °C. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. ABSOLUTE MAXIMUM RATINGS Parameter Limit Unit Referenced V+ to GND - 0.3 to + 6 V IN, COM, NC, NOa - 0.3 to (V+ + 0.3) Continuous Current (NO, NC, COM) ± 300 mA Peak Current (Pulsed at 1 ms, 10 % duty cycle) ± 500 Storage Temperature (D Suffix) - 65 to 150 °C ESD per Method 3015.7 > 2 kV Power Dissipation (Packages)b MSOP-10c 320 mW DFN-10d 1191 SPECIFICATIONS (V+ = 3 V) Parameter Symbol Test Conditions Otherwise Unless Specified V+ = 3 V, ± 10 %, VIN = 0.5 or 1.4 V e Tempa Limits - 40 to 85 °C Unit Minb Typc Maxb Analog Switch Analog Signal Ranged VNO, VNC VCOM Full 0 V+ V On-Resistance rON V+ = 2.7 V, VCOM = 0.6 V/1.5 V, INO, INC = 100 mA Room Full 0.35 0.5 0.6 Ω rON Flatness d rON Flatness Room 0.09 0.2 On-Resistance Match Between Channelsd Δr DS(on) Room 0.05 Switch Off Leakage Current INO(off) INC(off) V+ = 3.3 V VNO, VNC = 0.3 V/3 V, VCOM = 3 V/0.3 V Room Full - 1 - 10 1 10 nA ICOM(off) Room Full - 1 - 10 1 10 Channel-On Leakage Current ICOM(on) V+ = 3.3 V, VNO, VNC = VCOM = 0.3 V/3 V Room Full - 1 - 10 1 10 Digital Control Input High Voltaged VINH Full 1.4 V Input Low Voltage VINL Full 0.5 Input Capacitance Cin Full 10 pF Input Current IINL or IINH VIN = 0 or V+ Full 1 1 µA |
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