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W7NB80 Datasheet(PDF) 2 Page - STMicroelectronics

Part # W7NB80
Description  N-CHANNEL 800V - 1.6ohm - 6.5A - TO-247 PowerMESH MOSFET
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

W7NB80 Datasheet(HTML) 2 Page - STMicroelectronics

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THERMAL DATA
Rthj-case
Thermal Resistance Junction-case
Max
0.78
oC/W
Rthj-amb
Rthc-sink
T l
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature F or Soldering Purpose
30
0.1
300
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
Symbo l
Parameter
Max Value
Unit
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
6.5
A
EAS
Single Pulse Avalanche Energy
(starting Tj =25
oC, ID =IAR,VDD =50 V)
260
mJ
ELECTRICAL CHARACTERISTICS (Tcase =25
oC unless otherwise specified)
OFF
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
Breakdown Voltage
ID =250
µAVGS =0
800
V
IDSS
Zero Gat e Voltage
Drain Current (VGS =0)
VDS =Max Rating
VDS =Max Rating
Tc = 125
oC
1
50
µA
µA
IGSS
Gat e-body Leakage
Current (VDS =0)
VGS =
± 30 V
± 100
nA
ON (
∗)
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
VGS(th)
Gat e Threshold Voltage VDS =VGS ID = 250
µA
345
V
RDS(on)
Static Drain-source On
Resistance
VGS =10 V
ID =3 A
1.6
1. 9
Ω
Ω
ID(o n)
On State Drain Current
VDS >ID(o n) xRDS(on )max
VGS =10 V
6. 5
A
DYNAMIC
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
gfs (
∗)Forward
Transconductance
VDS >ID(o n) xRDS(on )max
ID =3 A
2. 5
4.7
S
Ciss
Cos s
Crss
Input Capacitance
Out put Capacitance
Reverse Transfer
Capacitance
VDS = 25V
f = 1MHz
VGS = 0
1250
145
16
pF
pF
pF
STW7NB80
2/8


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