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M5M5T5636GP Datasheet(PDF) 9 Page - Renesas Technology Corp |
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M5M5T5636GP Datasheet(HTML) 9 Page - Renesas Technology Corp |
9 / 18 page MITSUBISHI LSIs M5M5T5636GP –22,20 18874368-BIT(524288-WORD BY 36-BIT) NETWORK SRAM 8/17 Preliminary M5M5T5636GP REV.0.6 DC ELECTRICAL CHARACTERISTICS (Ta=0~70°C, VDD=2.375~2.625V, unless otherwise noted) Limits Symbol Parameter Condition Min Max Unit VDD Power Supply Voltage 2.375 2.625 V VDDQ = 2.5V 2.375 2.625 VDDQ I/O Buffer Power Supply Voltage VDDQ = 1.8V 1.7 1.95 V VDDQ = 2.375~2.625V 1.7 VIH High-level Input Voltage VDDQ = 1.7~1.95V 0.65*VDDQ VDDQ+0.3* V VDDQ = 2.375~2.625V 0.7 VIL Low-level Input Voltage VDDQ = 1.7~1.95V -0.3* 0.35*VDDQ V VOH High-level Output Voltage IOH = -2.0mA VDDQ-0.4 V VOL Low-level Output Voltage IOL = 2.0mA 0.4 V Input Leakage Current except ZZ and LBO# VI = 0V ~ VDDQ 10 Input Leakage Current of LBO# VI = 0V ~ VDDQ 100 ILI Input Leakage Current of ZZ VI = 0V ~ VDDQ 100 µA ILO Off-state Output Current VI (G#) ≥ VIH, VO = 0V ~ VDDQ 10 µA 4.0ns cycle(250MHz) 560 4.4ns cycle(225MHz) 500 ICC1 Power Supply Current : Operating Device selected; Output Open VI ≤VIL or VI≥VIH ZZ ≤VIL 5.0ns cycle(200MHz) 440 mA 4.0ns cycle(250MHz) 260 4.4ns cycle(225MHz) 220 ICC2 Power Supply Current : Deselected Device deselected VI ≤VIL or VI≥VIH ZZ ≤VIL 5.0ns cycle(200MHz) 180 mA ICC3 CMOS Standby Current (CLK stopped standby mode) Device deselected; Output Open VI ≤VSS+0.2V or VI≥VDDQ-0.2V CLK frequency=0Hz, All inputs static 30 mA ICC4 Snooze Mode Standby Current Snooze mode ZZ ≥VDDQ-0.2V, LBO#≥VDD-0.2V 30 mA 4.0ns cycle(250MHz) 180 4.4ns cycle(225MHz) 160 ICC5 Stall Current Device selected; Output Open CKE# ≥VIH VI ≤VSS+0.2V or VI ≥VDDQ-0.2V 5.0ns cycle(200MHz) 140 mA Note17.*VILmin is –1.0V and VIH max is VDDQ+1.0V in case of AC(Pulse width ≤2ns). Note18."Device Deselected" means device is in power-down mode as defined in the truth table. |
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