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FY12AAJ-03F Datasheet(PDF) 3 Page - Renesas Technology Corp |
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FY12AAJ-03F Datasheet(HTML) 3 Page - Renesas Technology Corp |
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3 / 3 page  Sep. 2001 MITSUBISHI Nch POWER MOSFET FY12AAJ-03F HIGH-SPEED SWITCHING USE V (BR)DSS V (BR)GSS IDSS IGSS VGS (th) rDS (ON) rDS (ON) rDS (ON) VDS (ON) | yfs | Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd VSD Rth (ch-a) trr V V mA µA V m Ω m Ω m Ω V S pF pF pF ns ns ns ns nC nC nC V °C/W ns 30 ±20 — — 1.0 — — — — — — — — — — — — — — — — — — — — — — 1.5 9.0 12.5 14.5 0.108 25 1800 500 230 18 20 50 17 35 4 10 0.75 — 45 — — 0.1 ±10 2.0 11.5 17.5 20.0 0.138 — — — — — — — — — — — 1.10 62.5 — ELECTRICAL CHARACTERISTICS (Tch = 25 °C) Drain-source breakdown voltage Gate-source breakdown voltage Drain-source leakage current Gate-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge Source-drain voltage Thermal resistance Reverse recovery time Symbol Unit Parameter Test conditions Limits Min. Typ. Max. ID = 1mA, VGS = 0V IG = ±100µA, VGS = 0V VDS = 30V, VGS = 0V VGS = ±20V, VDS = 0V ID = 1mA, VDS = 10V ID = 12A, VGS = 10V ID = 6A, VGS = 4.5V ID = 6A, VGS = 4V ID = 12A, VGS = 10V ID = 12A, VDS = 10V VDS = 10V, VGS = 0V, f = 1MHz VDD = 15V, ID = 6A, VGS = 10V, RG = 5 Ω VDD = 15V, VGS = 10V, ID = 12A IS = 1.8A, VGS = 0V Channel to air IS = 1.8A, dis/dt = –50A/ µs |
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