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H7N1005LMTL-E Datasheet(PDF) 3 Page - Renesas Technology Corp

Part # H7N1005LMTL-E
Description  Silicon N Channel MOS FET High Speed Power Switching
Download  9 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

H7N1005LMTL-E Datasheet(HTML) 3 Page - Renesas Technology Corp

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H7N1005LD, H7N1005LS, H7N1005LM
Rev.2.00 Oct 16, 2006 page 3 of 8
Main Characteristics
Drain to Source Voltage
VDS (V)
Maximum Safe Operation Area
Drain to Source Voltage
VDS (V)
Typical Output Characteristics
Gate to Source Voltage
VGS (V)
Typical Transfer Characteristics
20
16
12
8
4
0
20
15
10
5
0
0
1
234
6
5
Tc = 75°C
25°C
–25°C
10
1
0.1
0.01
0.1 0.3
1
3
10
30
100 300
VDS = 10 V
Pulse Test
100
Ta = 25°C
Operation in
this area is
limited by RDS (on)
50
0
0
20
10
30
40
50
100
150
200
Case Temperature
Tc (°C)
Power vs. Temperature Derating
Gate to Source Voltage
VGS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Drain Current
ID (A)
Static Drain to Source on State Resistance
vs. Drain Current
2.0
1.5
1.0
0.5
0
04
8
12
16
20
200
100
20
50
10
520
50
Pulse Test
ID = 10 A
2 A
5 A
1
10
100
2
1000
500
VGS = 4.5 V
10 V
Pulse Test
1 ms 100
µs
10
µs
0
2468
10
10 V
5 V
6 V
8 V
3.5 V
4.5 V
Pulse Test
VGS = 3 V
4 V
DC Operation
(Tc = 25°C)
PW = 10 ms
(1shot)


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