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H7N0607DL-E Datasheet(PDF) 4 Page - Renesas Technology Corp |
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H7N0607DL-E Datasheet(HTML) 4 Page - Renesas Technology Corp |
4 / 9 page H7N0607DL, H7N0607DS Rev.3.00, Jan.27.2005, page 4 of 8 0.1 1 10 10 100 1 Case Temperature Tc ( °C) Static Drain to Source on State Resistance vs. Temperature Drain Current ID (A) Forward Transfer Admittance vs. Drain Current 100 80 60 40 20 –50 0 50 100 200 150 0 VGS = 10 V 4.5 V Pulse Test 2, 5, 10 A ID = 10 A 5 A 2 A 100 Tc = –40 °C 150 °C 25 °C VDS = 10 V Pulse Test 1 0.1 0.3 3 10 30 100 010 20 30 40 50 100 1000 300 100 80 60 40 20 0 20 16 12 8 4 10 20 30 40 50 0 1000 100 300 30 10 1 3 0.1 0.3 3 10 100 1000 100 300 30 3 10 1 30 30 1 10 VGS = 0 f = 1 MHz Ciss Coss Crss ID = 30 A VGS VDS VGS = 10 V, VDS = 30 V PW = 5 µs, duty < 1 % Rg = 4.7 Ω tr tr td(on) td(off) tf tf 3000 10000 Reverse Drain Current IDR (A) Body-Drain Diode Reverse Recovery Time Drain to Source Voltage VDS (V) Typical Capacitance vs. Drain to Source Voltage Gate Charge Qg (nc) Dynamic Input Characteristics Drain Current ID (A) Switching Characteristics di / dt = 100 A / µs VGS = 0, Ta = 25°C VDD = 50 V 25 V 10 V VDD = 50 V 25 V 10 V |
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