H7N0603DS datasheet(1/9 Pages) RENESAS

Part #	H7N0603DS

Description	Silicon N Channel MOS FET High Speed Power Switching

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Manufacturer	RENESAS [Renesas Technology Corp]

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Rev.2.00, Jan.26.2005, page 1 of 8

H7N0603DL, H7N0603DS

Silicon N Channel MOS FET

High speed power Switching

REJ03G0123-0200

Rev.2.00

Jan.26.2005

Features

• Low on - resistance

RDS (on) = 11 m

Ω typ.

• Low drive current

• Capable of 4.5 gate drive

Outline

1. Gate

2. Drain

3. Source

4. Drain

H7N0603DL

PRSS0004ZD-B

(Previous code: DPAK(L)-2)

1 2

3

4

PRSS0004ZD-C

(Previous code: DPAK-(S))

H7N0603DS

4

1 2

3

D

G

S

Absolute Maximum Ratings

(Ta = 25

°C)

Item

Symbol

Ratings

Unit

Drain to source voltage

VDSS

60

V

Gate to source voltage

VGSS

±20

V

Drain current

ID

30

A

Drain peak current

ID (pulse)

Note1

120

A

Body drain diode reverse drain current

IDR

30

A

Avalanche current

IAP

Note3

25

A

Avalanche energy

EAR

Note3

53.6

mJ

Channel dissipation

Pch

Note2

40

W

Channel temperature

Tch

150

°C

Storage temperature

Tstg

–55 to +150

°C

Notes: 1. PW

≤ 10 µs, duty cycle ≤ 1%

2. Tc = 25

°C

3. Tch = 25

°C, Rg ≥ 50Ω

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