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H7N0405LD-E Datasheet(PDF) 3 Page - Renesas Technology Corp |
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H7N0405LD-E Datasheet(HTML) 3 Page - Renesas Technology Corp |
3 / 8 page H7N0405LD, H7N0405LS, H7N0405LM Rev.1.00 Sep 25, 2006 page 3 of 7 Main Characteristics 160 120 80 0 50 100 150 200 0.1 0.3 1 3 10 30 100 100 80 60 40 20 0 246 8 10 1000 300 100 30 10 1 0.3 0.03 0.01 0.1 3 Ta = 25 °C 10 µs 100 µs 40 4.4 V 4.0 V 10 V 100 80 60 40 20 0 123 4 5 –40 °C 25 °C Tc = 150 °C VDS = 10 V Pulse Test Pulse Test VGS = 3.6 V 6 V Case Temperature Tc ( °C) Power vs. Temperature Derating Drain to Source Voltage VDS (V) Maximum Safe Operation Area Gate to Source Voltage VGS (V) Typical Transfer Characteristics Drain to Source Voltage VDS (V) Typical Output Characteristics DC Operation (Tc = 25 °C) PW = 10 ms (1 shot) 1 30 100 3 100 1 10 10 3 30 VGS = 4.5 V 10 V Pulse Test Drain Current ID (A) Static Drain to Source on State Resistance vs. Drain Current Case Temperature Tc ( °C) Static Drain to Source on State Resistance vs. Temperature 5 10 15 –50 0 50 100 150 0 VGS = 10 V 4.5 V Pulse Test 10, 20, 50 A 10, 20, 50 A Operation in this area is limited by RDS(on) |
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