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H7N0405LD-E Datasheet(PDF) 3 Page - Renesas Technology Corp

Part # H7N0405LD-E
Description  Silicon N Channel MOS FET High Speed Power Switching
Download  8 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

H7N0405LD-E Datasheet(HTML) 3 Page - Renesas Technology Corp

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H7N0405LD, H7N0405LS, H7N0405LM
Rev.1.00 Sep 25, 2006 page 3 of 7
Main Characteristics
160
120
80
0
50
100
150
200
0.1
0.3
1
3
10
30
100
100
80
60
40
20
0
246
8
10
1000
300
100
30
10
1
0.3
0.03
0.01
0.1
3
Ta = 25
°C
10
µs
100
µs
40
4.4 V
4.0 V
10 V
100
80
60
40
20
0
123
4
5
–40
°C
25
°C
Tc = 150
°C
VDS = 10 V
Pulse Test
Pulse Test
VGS = 3.6 V
6 V
Case Temperature Tc (
°C)
Power vs. Temperature Derating
Drain to Source Voltage VDS (V)
Maximum Safe Operation Area
Gate to Source Voltage VGS (V)
Typical Transfer Characteristics
Drain to Source Voltage VDS (V)
Typical Output Characteristics
DC Operation
(Tc = 25
°C)
PW = 10 ms
(1 shot)
1
30
100
3
100
1
10
10
3
30
VGS = 4.5 V
10 V
Pulse Test
Drain Current ID (A)
Static Drain to Source on State Resistance
vs. Drain Current
Case Temperature Tc (
°C)
Static Drain to Source on State Resistance
vs. Temperature
5
10
15
–50
0
50
100
150
0
VGS = 10 V
4.5 V
Pulse Test
10, 20, 50 A
10, 20, 50 A
Operation in
this area is
limited by RDS(on)


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