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BCR3AS-12B Datasheet(PDF) 5 Page - Renesas Technology Corp |
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BCR3AS-12B Datasheet(HTML) 5 Page - Renesas Technology Corp |
5 / 8 page BCR3AS-12B (The product guaranteed maximum junction temperature of 150 °C) REJ03G0450-0300 Rev.3.00 Nov 30, 2007 Page 5 of 7 Rate of Rise of Off-State Voltage (V/ µs) Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj=125°C) Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj=150°C) Rate of Rise of Off-State Voltage (V/ µs) Breakover Voltage vs. Junction Temperature Junction Temperature (°C) Commutation Characteristics (Tj=125°C) Rate of Decay of On-State Commutating Current (A/ms) Commutation Characteristics (Tj=150°C) Rate of Decay of On-State Commutating Current (A/ms) Gate Current Pulse Width ( µs) Gate Trigger Current vs. Gate Current Pulse Width 23 101 57 102 23 5 7 103 23 5 7 104 120 0 20 40 60 80 100 140 160 160 100 80 40 20 0 140 60 120 20 60 100 160 140 040 80 120 – 60 – 20 – 40 101 103 7 5 3 2 100 25 7 101 102 7 5 3 2 3102 4 4 42 5 7 3 4 23 101 57 102 23 5 7 103 23 5 7 104 120 0 20 40 60 80 100 140 160 7 5 3 2 100 25 7 101 101 7 7 5 3 2 32 5 7 3102 100 7 5 3 2 100 23 5 7 101 101 7 7 5 3 2 23 5 7 102 100 Typical Example Typical Example Tj = 125°C III Quadrant I Quadrant Typical Example Tj = 150°C III Quadrant I Quadrant Main Voltage Main Current IT (di/dt)c τ VD Time Time (dv/dt)c Typical Example Tj = 125°C IT = 4A τ = 500µs VD = 200V f = 3Hz Minimum Characteristics Value III Quadrant I Quadrant Main Voltage Main Current IT (di/dt)c τ VD Time Time (dv/dt)c Typical Example Tj = 150°C IT = 4A τ = 500µs VD = 200V f = 3Hz Minimum Characteristics Value I Quadrant III Quadrant Typical Example IRGT III IRGT I IFGT I |
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