HAT1054R-EL-E datasheet(3/8 Pages) RENESAS

Part #	HAT1054R-EL-E

Description	Silicon P Channel Power MOS FET High Speed Power Switching

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Manufacturer	RENESAS [Renesas Technology Corp]

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3 / 8 page

HAT1054R

Rev.3.00 Sep 07, 2005 page 3 of 7

Main Characteristics

4.0

1.0

0

2.0

3.0

0

50

100

150

200

Ambient Temperature

Ta (°C)

Power vs. Temperature Derating

Test Condition:

When using the glass epoxy board

(FR4 40

× 40 × 1.6 mm), PW ≤ 10 s

Drain to Source Voltage VDS (V)

Maximum Safe Operation Area

–0.1

–100

–10

–1

–0.1

–0.01

–0.3

–1

–3

–10

–30

–100

–30

–3

–0.3

–0.03

Ta = 25°C

1 shot pulse

1 Drive Operation

–20

–16

–12

0

–4

–8

0

Drain to Source Voltage

VDS (V)

Typical Output Characteristics

–2 V

Pulse Test

–2.5 V

–2

–4

–6

–8

–10

–20

0

–4

–8

–12

–16

0

Gate to Source Voltage

VGS (V)

Typical Transfer Characteristics

–1

–2

–3

–4

–5

Tc = –25°C

75°C

25°C

VDS = –10 V

Pulse Test

Note 5:

When using the glass epoxy board

(FR4 40

× 40 × 1.6 mm)

–0.20

0

–0.04

–0.08

–0.12

–0.16

0

Gate to Source Voltage

VGS (V)

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

–2

–4

–6

–8

–10

Pulse Test

ID = –5 A

–2 A

–1 A

Drain Current

ID (A)

Static Drain to Source on State Resistance

vs. Drain Current

1

0.2

0.5

0.1

0.02

0.05

0.01

–20

–0.2

–0.5

–1

–2

–5

–10

100

µs

1 ms

PW

=

10

ms

DC

Operation

(PW

≤ 10

s)

VGS = –1.5 V

–10 V

–5 V

10

µs

1 Drive

Ope

ration

–4.5 V

VGS = –2.5 V

Pulse Test

–4 V

Note

5

Operation in

this area is

limited by RDS (on)

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