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HAT2167N-EL-E Datasheet(PDF) 1 Page - Renesas Technology Corp |
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HAT2167N-EL-E Datasheet(HTML) 1 Page - Renesas Technology Corp |
1 / 7 page REJ03G1681-0200 Rev.2.00 May 27, 2008 Page 1 of 6 HAT2167N Silicon N Channel Power MOS FET Power Switching REJ03G1681-0200 Rev.2.00 May 27, 2008 Features • High speed switching • Capable of 4.5 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 4.5 m Ω typ. (at V GS = 10 V) Outline RENESAS Package code: PTSP0008DC-A (Package name: LFPAK-i) 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain 8(D) 7(D) 6(D) 5(D) 1(S) 2(S) 3(S) 4(G) G D SSS 4 12 3 5 D 6 D 7 D 8 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 30 V Gate to source voltage VGSS ±20 V Drain current ID 40 A Drain peak current ID(pulse) Note1 160 A Body-drain diode reverse drain current IDR 40 A Avalanche current IAP Note 2 20 A Avalanche energy EAR Note 2 40 mJ Channel dissipation Pch Note3 20 W Channel to case thermal resistance θch-C 6.25 °C/W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tch = 25°C, Rg ≥ 50 Ω 3. Tc = 25 °C |
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