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HAT2068R-EL-E Datasheet(PDF) 2 Page - Renesas Technology Corp |
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HAT2068R-EL-E Datasheet(HTML) 2 Page - Renesas Technology Corp |
2 / 7 page HAT2068R Rev.5.00 Sep 07, 2005 page 2 of 6 Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Value Unit Drain to source voltage VDSS 30 V Gate to source voltage VGSS ±20 V Drain current ID 14 A Drain peak current ID (pulse) Note 1 112 A Body-drain diode reverse drain current IDR 14 A Channel dissipation Pch Note 2 2.5 W Channel to ambient thermal impedance θ ch-a Note 2 50 °C/W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s Electrical Characteristics (Ta = 25 °C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V (BR) DSS 30 — — V ID = 10 mA, VGS = 0 Gate to source breakdown voltage V (BR) GSS ±20 — — V IG = ±100 µA, VDS = 0 Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 Zero gate voltage drain current IDSS — — 1 µA VDS = 30 V, VGS = 0 Gate to source cutoff voltage VGS (off) 1.0 — 2.5 V VDS = 10 V, ID = 1 mA RDS (on) — 7 9 m Ω ID = 7 A, VGS = 10 V Note 3 Static drain to source on state resistance RDS (on) — 11 16 m Ω ID = 7 A, VGS = 4.5 V Note 3 Forward transfer admittance |yfs| 16 28 — S ID = 7 A, VDS = 10 V Note 3 Input capacitance Ciss — 1650 — pF Output capacitance Coss — 400 — pF Reverse transfer capacitance Crss — 220 — pF VDS = 10 V VGS = 0 f = 1 MHz Total gate charge Qg — 26 — nC Gate to source charge Qgs — 5 — nC Gate to drain charge Qgd — 5 — nC VDD = 10 V VGS = 10 V ID = 14 A Turn-on delay time td (on) — 15 — ns Rise time tr — 30 — ns Turn-off delay time td (off) — 50 — ns Fall time tf — 10 — ns VGS = 10 V, ID = 7 A VDD ≈ 10 V RL = 1.43 Ω Rg = 4.7 Ω Body-drain diode forward voltage VDF — 0.80 1.10 V IF = 14 A, VGS = 0 Note 3 Body-drain diode reverse recovery time trr — 50 — ns IF = 14 A, VGS = 0 diF/dt = 50 A/ µs Note: 3. Pulse test |
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