HAT2033R datasheet(4/8 Pages) RENESAS

Part #	HAT2033R

Description	Silicon N Channel Power MOS FET High Speed Power Switching

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Manufacturer	RENESAS [Renesas Technology Corp]

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4 / 8 page

HAT2033R, HAT2033RJ

Rev.4.00 Sep 07, 2005 page 4 of 7

Case Temperature

Tc

(°C)

Static Drain to Source on State Resistance

vs. Temperature

Drain Current ID (A)

Forward Transfer Admittance vs.

Drain Current

0.10

0.08

0.02

0.04

0.06

–40

0

40

80

120

160

0

1, 2, 5 A

10 V

VGS = 4 V

0.1

0.3

1

3

10

30

100

50

20

5

10

2

0.5

1

Pulse Test

Reverse Drain Current IDR (A)

Body-Drain Diode Reverse

Recovery Time

Drain to Source Voltage VDS (V)

Typical Capacitance vs.

Drain to Source Voltage

Gate Charge

Qg (nc)

Dynamic Input Characteristics

0.1

0.3

1

3

10

30

100

1000

500

200

50

100

20

10

010

20

30

40

50

5000

2000

1000

500

200

50

20

100

10

100

0

20

40

60

80

0

20

8

1624

3240

0

4

8

12

16

VGS

VDS

ID = 7 A

VDD = 50 V

25 V

10 V

VDD = 50 V

25 V

10 V

di / dt = 50 A /

µs

VGS = 0, Ta = 25°C

5 A

Drain Current

ID (A)

Switching Characteristics

100

300

10

3

0.1

0.3

30

10

3

100

1

1000

30

1

tr

td(on)

td(off)

tf

ID = 1, 2 A

25°C

Tc = –25°C

75°C

VDS = 10 V

Pulse Test

Ciss

Coss

Crss

VGS = 0

f = 1 MHz

VGS = 4 V, VDD = 30 V

PW = 3

µs, duty ≤ 1 %

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