HAT2026R-EL-E datasheet(3/7 Pages) RENESAS

Part #	HAT2026R-EL-E

Description	Silicon N Channel Power MOS FET High Speed Power Switching

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Manufacturer	RENESAS [Renesas Technology Corp]

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3 / 7 page

HAT2026R

Rev.5.00 Sep 07, 2005 page 3 of 6

Main Characteristics

Ambient Temperature

Ta (°C)

Power vs. Temperature Derating

Drain to Source Voltage

VDS (V)

Maximum Safe Operation Area

Drain to Source Voltage

VDS (V)

Typical Output Characteristics

Gate to Source Voltage

VGS (V)

Typical Transfer Characteristics

Note 4:

When using the glass epoxy board

(FR4 40

× 40 × 1.6 mm)

4.0

0

1.0

2.0

3.0

0

50

100

150

200

100

30

10

3

1

0.3

0.1

0.03

0.01

0.1

0.3

1

3

10

30

100

50

0

10

20

30

40

02

4

6

8

10

2 V

VGS = 1.5 V

50

0

10

20

30

40

01

2

3

4

5

25°C

Operation in

this area is

limited by RDS (on)

Pulse Test

VDS = 10 V

Pulse Test

Test Condition:

When using the glass epoxy board

(FR4 40

× 40 × 1.6 mm), PW ≤ 10 s

Ta = 25°C

1 shot Pulse

Gate to Source Voltage

VGS (V)

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

Drain Current

ID (A)

Static Drain to Source on State Resistance

vs. Drain Current

0.20

0

0.04

0.08

0.12

0.16

0246810

5 A

2 A

ID = 10 A

0.5

1

2

5

10

20

50

0.2

0.1

0.05

0.01

0.02

0.005

0.002

4 V

VGS = 2.5 V

Pulse Test

DC

Operation

(PW

≤ 10

s)

PW

=

10

ms

Note

4

1 ms

5 V

4 V

75°C

10 V

2.5 V

Tc = –25°C

3 V

10

µs

100

µs

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