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H7P1002DSTL-E Datasheet(PDF) 3 Page - Renesas Technology Corp

Part # H7P1002DSTL-E
Description  Silicon P Channel MOS FET High Speed Power Switching
Download  9 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

H7P1002DSTL-E Datasheet(HTML) 3 Page - Renesas Technology Corp

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H7P1002DL, H7P1002DS
REJ03G1601-0100 Rev.1.00 Nov 16, 2007
Page 3 of 8
Main Characteristics
Case Temperature
Tc (°C)
Power vs. Temperature Derating
Drain to Source Voltage
VDS (V)
Typical Output Characteristics
Gate to Source Voltage
VGS (V)
Typical Transfer Characteristics
–20
0
–5
–10
–15
0
–2
–4–6–8
–10
–20
0
–5
–10
–15
0–1
–2
–3
–4
–5
Tc = 75°C
50
40
0
10
20
30
050
100
25
75
125
150
VDS = –10 V
Pulse Test
–10 V
–5 V
–8 V
–4 V
–3.5 V
–3 V
VGS = –2 V
Pulse Test
Drain to Source Voltage
VDS (V)
Maximum Safe Operation Area
–10
–0.3
–1
–30
–3
–0.1
–0.03
–0.01
–0.1 –0.3 –1
–3
–30
–10
–300
–100
–1000
–100
Ta = 25°C
PW
=
10
ms
(1
shot)
DC
Operation
(Tc
= 25
°C)
100
µs
Operation in
this area is
limited by RDS (on)
Gate to Source Voltage
VGS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–1.2
0
–0.2
–0.4
–0.6
–0.8
–1.0
0–4
–8
–12
–16
–20
Pulse Test
ID = –10 A
–5 A
–2 A
Drain Current
ID (A)
Static Drain to Source on State Resistance
vs. Drain Current
200
100
20
50
10
–2
–20
–50
–1
–10
–5
–100
1000
500
VGS = –4 V
–10 V
Pulse Test
–25°C
25°C


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