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H7P1002DSTL-E Datasheet(PDF) 3 Page - Renesas Technology Corp |
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H7P1002DSTL-E Datasheet(HTML) 3 Page - Renesas Technology Corp |
3 / 9 page H7P1002DL, H7P1002DS REJ03G1601-0100 Rev.1.00 Nov 16, 2007 Page 3 of 8 Main Characteristics Case Temperature Tc (°C) Power vs. Temperature Derating Drain to Source Voltage VDS (V) Typical Output Characteristics Gate to Source Voltage VGS (V) Typical Transfer Characteristics –20 0 –5 –10 –15 0 –2 –4–6–8 –10 –20 0 –5 –10 –15 0–1 –2 –3 –4 –5 Tc = 75°C 50 40 0 10 20 30 050 100 25 75 125 150 VDS = –10 V Pulse Test –10 V –5 V –8 V –4 V –3.5 V –3 V VGS = –2 V Pulse Test Drain to Source Voltage VDS (V) Maximum Safe Operation Area –10 –0.3 –1 –30 –3 –0.1 –0.03 –0.01 –0.1 –0.3 –1 –3 –30 –10 –300 –100 –1000 –100 Ta = 25°C PW = 10 ms (1 shot) DC Operation (Tc = 25 °C) 100 µs Operation in this area is limited by RDS (on) Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage –1.2 0 –0.2 –0.4 –0.6 –0.8 –1.0 0–4 –8 –12 –16 –20 Pulse Test ID = –10 A –5 A –2 A Drain Current ID (A) Static Drain to Source on State Resistance vs. Drain Current 200 100 20 50 10 –2 –20 –50 –1 –10 –5 –100 1000 500 VGS = –4 V –10 V Pulse Test –25°C 25°C |
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