Electronic Components Datasheet Search |
|
HAT2193WP-EL-E Datasheet(PDF) 1 Page - Renesas Technology Corp |
|
HAT2193WP-EL-E Datasheet(HTML) 1 Page - Renesas Technology Corp |
1 / 4 page Rev.1.00, Aug.24.2005, page 1 of 3 HAT2193WP Silicon N Channel Power MOS FET Power Switching REJ03G1252-0100 Rev.1.00 Aug.24,2005 Features • Low on-resistance • Low drive current • High density mounting Outline RENESAS Package code: PWSN0008DA-A (Package name: WPAK) G D SS S DD D 4 12 3 56 7 8 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain 8 7 6 5 2 1 3 4 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 250 V Gate to source voltage VGSS ±30 V Drain current ID 7 A Drain peak current ID (pulse) Note1 14 A Body-drain diode reverse drain current IDR 7 A Body-drain diode reverse drain peak current IDR (pulse) Note1 14 A Avalanche current IAP Note3 3.5 A Avalanche energy EAR Note3 0.7 mJ Channel dissipation Pch Note2 20 W Channel to case thermal impedance θch-c 6.25 °C/W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25 °C 3. STch = 25 °C, Tch ≤ 150°C |
Similar Part No. - HAT2193WP-EL-E |
|
Similar Description - HAT2193WP-EL-E |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |