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H7P1002DL Datasheet(PDF) 5 Page - Renesas Technology Corp |
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H7P1002DL Datasheet(HTML) 5 Page - Renesas Technology Corp |
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5 / 9 page  H7P1002DL, H7P1002DS REJ03G1601-0100 Rev.1.00 Nov 16, 2007 Page 5 of 8 Source to Drain Voltage VSD (V) Reverse Drain Current vs. Source to Drain Voltage 20 25 50 75 100 125 150 0 4 8 12 16 Channel Temperature Tch (°C) Maximum Avalanche Energy vs. Channel Temperature Derating IAP = –12 A VDD = –50 V duty < 0.1 % Rg ≥ 50 Ω –20 0 –5 –10 –15 0 –0.4 –0.8 –1.2 –1.6 –2.0 Pulse Test –5 V VGS = 0, 5 V –10 V Avalanche Test Circuit Avalanche Waveform 0 ID VDS IAP V(BR)DSS VDD EAR = • L • IAP 2 • 2 1 VDSS VDSS – VDD D.U.T Rg IAP Monitor VDS Monitor VDD 50 Ω Vin –15 V L Pulse Width PW (S) Normalized Transient Thermal Impedance vs. Pulse Width 3 1 0.3 0.1 0.03 0.01 10 µ 100 µ 1 m 10 m 100 m 1 10 Tc = 25°C D = 1 0.5 0.2 0.1 0.05 0.02 0.01 1shot pul se PDM PW T D = PW T θch – c (t) = γ s (t) • θch – c θch – c = 4.17°C/W, Tc = 25°C |
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