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H5N5006DL-E Datasheet(PDF) 1 Page - Renesas Technology Corp |
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H5N5006DL-E Datasheet(HTML) 1 Page - Renesas Technology Corp |
1 / 8 page Rev.1.00, May 30, 2006, page 1 of 7 H5N5006DL, H5N5006DS Silicon N Channel MOS FET High Speed Power Switching REJ03G0397-0100 Rev.1.00 May 30, 2006 Features • Low on-resistance: R DS(on) = 2.5 Ω typ. • Low leakage current: I DSS = 1 µA max. (at V DS = 500 V) • High speed switching: t f = 15 ns typ. (at VGS = 10 V, VDD ≅ 250 V, I D = 1.5 A) • Low gate charge: Qg = 14 nC typ. (at V DD = 400 V, VGS = 10 V, ID = 3 A) • Avalanche ratings Outline 1. Gate 2. Drain 3. Source 4. Drain RENESAS Package code: PRSS0004ZD-C (Package name: DPAK (S) ) 1 2 3 4 RENESAS Package code: PRSS0004ZD-B (Package name: DPAK (L)-(2) ) 1 2 3 4 D G S Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 500 V Gate to source voltage VGSS ±30 V Drain current ID 3 A Drain peak current ID (pulse) Note1 12 A Body-drain diode reverse drain current IDR 3 A Body-drain diode reverse drain peak current IDR (pulse) Note1 12 A Avalanche current IAP Note3 3 A Channel dissipation Pch Note2 30 W Channel to case thermal impedance θch-c 4.17 °C/W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25 °C 3. STch = 25 °C, Tch ≤ 150°C |
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