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H7N0401LD Datasheet(PDF) 4 Page - Renesas Technology Corp

Part # H7N0401LD
Description  Silicon N Channel MOS FET High Speed Power Switching
Download  9 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

H7N0401LD Datasheet(HTML) 4 Page - Renesas Technology Corp

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H7N0401LD, H7N0401LS, H7N0401LM
Rev.5.00 Apr 07, 2006 page 4 of 8
Case Temperature
Tc (°C)
Static Drain to Source on State Resistance
vs. Temperature
Drain Current ID (A)
Forward Transfer Admittance vs.
Drain Current
10
–50
0
50
100
150
200
0
2
4
6
8
VGS = 4.5 V
10 V
10, 20, 50 A
ID = 10, 20, 50 A
Pulse Test
1
3
10
30
100
100
1000
300
30
10
3
1
Tc = –25°C
75°C
25°C
300
1000
VDS = 10 V
Pulse Test
Reverse Drain Current
IDR (A)
Body to Drain Diode Reverse
Recovery Time
Drain to Source Voltage VDS (V)
Typical Capacitance vs.
Drain to Source Voltage
Gate Charge Qg (nc)
Dynamic Input Characteristics
Drain Current
ID (A)
Switching Characteristics
12
10
20
5
50
100
1000
200
500
100
20
50
10
di / dt = 100 A /
µs
VGS = 0, Ta = 25°C
0
102030
4050
1000
3000
300
100
10000
30000
100
0
20
40
80
120
160
200
0
4
8
12
16
0
20
40
60
80
ID = 95 A
VGS
VDS
1000
200
100
500
50
20
10
0.1
0.3
3
10
100
30
1
VDD = 40 V
25 V
10 V
VDD = 10 V
25 V
40 V
VGS = 0
f = 1 MHz
Ciss
Coss
Crss
tr
td(on)
td(off)
tf
VGS = 10 V, VDD = 30 V
PW = 5
µs, duty ≤ 1 %
Rg = 4.7
Ω


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