 |
 |
|
| BCR8PM-20L |
|
||||||||||||||||
 RENESAS
|
| ||||||||||||||||
|
5 page 
BCR8PM-20L Rev.1.00, Aug.20.2004, page 5 of 7 Holding Current vs. Junction Temperature Junction Temperature (°C) Latching Current vs. Junction Temperature Junction Temperature (°C) Rate of Rise of Off-State Voltage (V/ µs) Breakover Voltage vs. Rate of Rise of Off-State Voltage Breakover Voltage vs. Junction Temperature Junction Temperature (°C) Commutation Characteristics Rate of Decay of On-State Commutating Current (A/ms) Gate Current Pulse Width ( µs) Gate Trigger Current vs. Gate Current Pulse Width 103 7 5 3 2 –60 –20 20 102 7 5 3 2 60 100 140 4 4 –40 0 40 80 120 101 160 –40 0 40 80 120 103 7 5 3 2 102 7 5 3 2 101 7 5 3 2 100 160 100 80 40 20 0 140 40 –40 –60 –20 0 20 60 80 140 100 120 60 120 101 103 7 5 3 2 100 25 101 102 7 5 3 2 37 102 4 4 42 5 37 4 23 101 57 102 23 5 7 103 23 5 7 104 120 0 20 40 60 80 100 140 160 101 23 100 57 101 23 5 7 102 23 5 7 103 3 2 102 7 5 3 2 7 5 7 5 3 2 100 Typical Example T2+, G+ T2–, G– Typical Example T2+, G– Typical Example Distribution Typical Example Tj = 125°C III Quadrant I Quadrant Typical Example IRGT III IRGT I IFGT I Typical Example Tj = 125°C IT = 4A τ = 500µs VD = 200V f = 3Hz Main Voltage Main Current IT (di/dt)c τ VD Time Time (dv/dt)c Minimum Characteristics Value III Quadrant I Quadrant Typical Example |
