Electronic Components Datasheet Search |
|
H5N2306PF-E Datasheet(PDF) 6 Page - Renesas Technology Corp |
|
H5N2306PF-E Datasheet(HTML) 6 Page - Renesas Technology Corp |
6 / 10 page H5N2306PF Rev.2.00, Jun.25.2004, page 6 of 9 0.1 0.3 1 3 10 30 300 1000 100 1000 200 500 100 20 50 10 0 50 100 150 2000 5000 10000 1000 100 200 500 400 0 16 300 12 200 8 100 4 20 40 60 80 100 0 10000 1000 10 100 0.1 0.3 1 3 10 30 1000 100 300 20 50 10 V = 0 f = 1 MHz GS Coss I = 30 A D VDD VGS Reverse Drain Current IDR (A) Body-Drain Diode Reverse Recovery Time Drain to Source Voltage VDS (V) Typical Capacitance vs. Drain to Source Voltage Gate Charge Qg (nC) Dynamic Input Characteristics Drain Current ID (A) Switching Characteristics di / dt = 100 A / µs V = 0, Ta = 25 °C GS V = 160 V 100 V 50 V DS r t r t td(on) td(off) V = 10 V, V = 100 V PW = 5 µs, duty ≤ 1% R = 10 Ω GS DD G Ciss Crss V = 160 V 100 V 50 V DS t f |
Similar Part No. - H5N2306PF-E |
|
Similar Description - H5N2306PF-E |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |