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H5N2004DL-E Datasheet(PDF) 1 Page - Renesas Technology Corp |
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H5N2004DL-E Datasheet(HTML) 1 Page - Renesas Technology Corp |
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1 / 8 page  Rev.2.00 Sep 07, 2005 page 1 of 7 H5N2004DL, H5N2004DS Silicon N Channel MOS FET High Speed Power Switching REJ03G1103-0200 (Previous: ADE-208-1372) Rev.2.00 Sep 07, 2005 Features • Low on-resistance: R DS (on) = 0.38 Ω typ. • Low leakage current: I DSS = 1 µA max (at VDS = 200 V) • High speed switching: t f = 10 ns typ (at VGS = 10 V, VDD = 100 V, ID = 4 A) • Low gate charge: Qg = 14 nC typ (at V DD = 160 V, VGS = 10 V, ID = 8 A) • Avalanche ratings Outline D G S RENESAS Package code: PRSS0004ZD-B (Package name: DPAK (L)-(2) ) RENESAS Package code: PRSS0004ZD-C (Package name: DPAK (S) ) 1. Gate 2. Drain 3. Source 4. Drain 1 2 3 4 1 2 3 4 |
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