FS100KMJ-03F datasheet(4/7 Pages) RENESAS

Part #	FS100KMJ-03F

Description	High-Speed Switching Use Nch Power MOS FET

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Manufacturer	RENESAS [Renesas Technology Corp]

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4 / 7 page

FS100KMJ-03F

Rev.1.00, Aug.20.2004, page 4 of 6

Transfer Characteristics (Typical)

Gate-Source Voltage VGS (V)

Forward Transfer Admittance vs.

Drain Current (Typical)

Drain Current ID (A)

Switching Characteristics (Typical)

Drain-Source Voltage VDS (V)

Capacitance vs.

Drain-Source Voltage (Typical)

Drain Current ID (A)

Gate-Source Voltage vs.

Gate Charge (Typical)

Gate Charge Qg (nC)

Source-Drain Diode Forward

Characteristics (Typical)

Source-Drain Voltage VSD (V)

0

20

40

60

80

100

02468

10

23

5 7 10

1

23

5 7 10

2

10

0

10

3

7

5

3

2

7

5

3

2

7

5

3

2

10

2

10

1

10

0

23 5 710

0

10

–1

23 5 710

1

23 5 710

2

23

5 7 10

1

23

5 7 10

2

10

0

10

4

7

5

3

2

7

5

3

2

10

3

10

2

10

3

7

5

3

2

7

5

3

2

10

2

10

1

td(off)

tf

tr

td(on)

20V

25V

0

2

4

6

8

10

0

40

80

120

160

200

0

0.4

0.8

1.2

1.6

2.0

0

20

40

60

80

100

VDS = 15V

Tc = 25°C

VDS = 10V

Pulse Test

VDS = 10V

Pulse Test

Tc = 25°C

75°C

125°C

Tch = 25°C

f = 1MHz

VGS = 0V

Ciss

Coss

Crss

Tch = 25°C, VDD = 15V

VGS = 10V, RGEN = RGS = 50

Ω

Tch = 25°C

ID = 100A

VGS = 0V

Pulse Test

Tc = 125°C

75°C

25°C

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FS100KMJ-03F Datasheet(PDF) 4 Page - Renesas Technology Corp

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