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FS50VSJ-2 Datasheet(PDF) 1 Page - Renesas Technology Corp |
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FS50VSJ-2 Datasheet(HTML) 1 Page - Renesas Technology Corp |
1 / 7 page Rev.2.00 Aug 07, 2006 page 1 of 6 FS50VSJ-2 High-Speed Switching Use Nch Power MOS FET REJ03G1426-0200 (Previous: MEJ02G0069-0101) Rev.2.00 Aug 07, 2006 Features • Drive voltage : 4 V • V DSS : 100 V • r DS(ON) (max) : 48 m Ω • I D : 50 A • Integrated Fast Recovery Diode (TYP.) : 90 ns Outline RENESAS Package code: PRSS0004AB-A (Package name: TO-220S) 1. Gate 2. Drain 3. Source 4. Drain 1 2 3 4 1 3 2, 4 Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc. Maximum Ratings (Tc = 25°C) Parameter Symbol Ratings Unit Conditions Drain-source voltage VDSS 100 V VGS = 0 V Gate-source voltage VGSS ±20 V VDS = 0 V Drain current ID 50 A Drain current (Pulsed) IDM 200 A Avalanche drain current (Pulsed) IDA 50 A L = 50 µH Source current IS 50 A Source current (Pulsed) ISM 200 A Maximum power dissipation PD 70 W Channel temperature Tch – 55 to +150 °C Storage temperature Tstg – 55 to +150 °C Mass — 1.2 g Typical value |
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Similar Description - FS50VSJ-2 |
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