Rev.2.00

Aug 07, 2006

page 1 of 6

FS50KMJ-2

High-Speed Switching Use

Nch Power MOS FET

REJ03G1420-0200

(Previous: MEJ02G0067-0101)

Rev.2.00

Aug 07, 2006

Features

• Drive voltage : 4 V

• V

• r

Ω

• I

• Integrated Fast Recovery Diode (TYP.) : 90 ns

• Viso : 2000 V

Outline

RENESAS Package code: PRSS0003AB-A

(Package name: TO-220FN)

1

1. Gate

2. Drain

3. Source

3

2

1

3

2

Applications

Motor control, Lamp control, Solenoid control, DC-DC converters, etc.

Maximum Ratings

(Tc = 25°C)

Parameter

Symbol

Ratings

Unit

Conditions

Drain-source voltage

100

V

Gate-source voltage

±20

V

Drain current

50

A

Drain current (Pulsed)

200

A

Avalanche drain current (Pulsed)

50

A

L = 50

µH

Source current

50

A

Source current (Pulsed)

200

A

Maximum power dissipation

30

W

Channel temperature

Tch

– 55 to +150

°C

Storage temperature

Tstg

– 55 to +150

°C

Isolation voltage

Viso

2000

V

AC for 1 minute,

Terminal to case

Mass

—

2.0

g

Typical value