BCR10CS-12LB (The product guaranteed maximum junction temperature of 150

°C)

REJ03G0469-0300

Rev.3.00

Nov 30, 2007

Page 2 of 7

Parameter

Symbol

Ratings

Unit

Conditions

RMS on-state current

10

A

Commercial frequency, sine full wave

360° conduction, Tc = 128

Surge on-state current

100

A

60Hz sinewave 1 full cycle, peak value,

non-repetitive

I

I

41.6

A

Value corresponding to 1 cycle of half

wave 60Hz, surge on-state current

Peak gate power dissipation

5

W

Average gate power dissipation

0.5

W

Peak gate voltage

10

V

Peak gate current

2

A

Junction temperature

Tj

– 40 to +150

°C

Storage temperature

Tstg

– 40 to +150

°C

Mass

—

1.2

g

Typical value

Notes: 1. Gate open.

Electrical Characteristics

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test conditions

Repetitive peak off-state current

—

—

2.0

mA

Tj = 150

On-state voltage

—

—

1.5

V

Tc = 25

Instantaneous measurement

Ι

—

—

1.5

V

ΙΙ

—

—

1.5

V

Gate trigger voltage

Note2

ΙΙΙ

—

—

1.5

V

Tj = 25

Ω

Ι

—

—

30

Note6

mA

ΙΙ

—

—

30

Note6

mA

Gate trigger current

Note2

ΙΙΙ

—

—

30

Note6

mA

Tj = 25

Ω

Gate non-trigger voltage

0.2/0.1

—

—

V

Tj = 125

Thermal resistance

—

—

1.8

°C/W

Junction to case

Note3 Note4

Critical-rate of rise of off-state

commutating voltage

Note5

(dv/dt)c

10/1

—

—

V/

µs

Tj = 125

°C/150°C

Notes: 2. Measurement using the gate trigger characteristics measurement circuit.

5. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.

Test conditions

Commutating voltage and current waveforms

(inductive load)

1. Junction temperature

Tj = 125

°C/150°C

2. Rate of decay of on-state commutating current

(di/dt)c = – 5.0 A/ms

3. Peak off-state voltage

Supply Voltage

Time

Time

Time

Main Current

Main Voltage

(di/dt)c

(dv/dt)c