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CR5AS-12 Datasheet(PDF) 2 Page - Renesas Technology Corp

Part # CR5AS-12
Description  Thyristor Medium Power Use
Download  8 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

CR5AS-12 Datasheet(HTML) 2 Page - Renesas Technology Corp

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CR5AS-12
Rev.2.00,
Apr.05.2005,
page 2 of 7
Parameter
Symbol
Ratings
Unit
Conditions
RMS on-state current
IT (RMS)
7.8
A
Average on-state current
IT (AV)
5
A
Commercial frequency, sine half wave
180° conduction, Tc = 88°C
Surge on-state current
ITSM
90
A
60Hz sine half wave 1 full cycle,
peak value, non-repetitive
I
2t for fusing
I
2t
33
A
2s
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Peak gate power dissipation
PGM
0.5
W
Average gate power dissipation
PG (AV)
0.1
W
Peak gate forward voltage
VFGM
6
V
Peak gate reverse voltage
VRGM
6
V
Peak gate forward current
IFGM
0.3
A
Junction temperature
Tj
– 40 to +125
°C
Storage temperature
Tstg
– 40 to +125
°C
Mass
0.26
g
Typical value
Notes: 1. With gate to cathode resistance RGK = 220
Ω.
Electrical Characteristics
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test conditions
Repetitive peak reverse current
IRRM
2.0
mA
Tj = 125°C, VRRM applied,
RGK = 220
Repetitive peak off-state current
IDRM
2.0
mA
Tj = 125°C, VDRM applied,
RGK = 220
On-state voltage
VTM
1.8
V
Tc = 25°C, ITM = 15 A,
instantaneous value
Gate trigger voltage
VGT
0.8
V
Tj = 25°C, VD = 6 V, IT = 0.1 A
Gate non-trigger voltage
VGD
0.1
V
Tj = 125°C, VD = 1/2 VDRM,
RGK = 220
Gate trigger current
IGT
1
100
Note3
µA
Tj = 25°C, VD = 6 V, IT = 0.1 A
Holding current
IH
3.5
mA
Tj = 25°C, VD = 12 V,
RGK = 220
Thermal resistance
Rth (j-c)
3.0
°C/W
Junction to case
Note2
Notes: 2. The measurement point for case temperature is at anode tab.
3. If special values of IGT are required, choose item D or E from those listed in the table below if possible.
Item
A
B
C
D
E
IGT (
µA)
1 to 30
20 to 50
40 to 100
1 to 50
20 to 100
The above values do not include the current flowing through the 220
Ω resistance between the gate and
cathode.


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