H7N0308AB_05 datasheet(4/7 Pages) RENESAS

Part #	H7N0308AB

Description	Silicon N Channel MOS FET High Speed Power Switching

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Manufacturer	RENESAS [Renesas Technology Corp]

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H7N0308AB

Rev.4.00 Sep 07, 2005 page 4 of 6

Case Temperature

Tc

(°C)

Static Drain to Source on State Resistance

vs. Temperature

Drain Current ID (A)

Forward Transfer Admittance vs.

Drain Current

12

–25

0

25

75

100

50

125 150

0

2

4

6

8

10

ID = 50 A

ID = 10 A, 20 A

10 A, 20 A, 50 A

VGS = 4.5 V

10 V

Pulse Test

30

110

100

3

100

1000

300

10

3

30

1

VDS = 10 V

Pulse Test

75°C

25°C

Drain to Source Voltage VDS (V)

Typical Capacitance vs.

Drain to Source Voltage

0

1020

304050

10000

3000

1000

300

100

50

40

30

20

10

0

20

16

12

8

4

20

40

60

80

100

0

ID = 70 A

VGS

VDS

VDD = 20 V

10 V

5 V

VDD = 5 V

10 V

20 V

Gate Charge

Qg (nc)

Dynamic Input Characteristics

0.1

0.3

1

3

10

30

100

20

50

10

di / dt = 50 A /

µs

VGS = 0, Ta = 25°C

Reverse Drain Current

IDR (A)

Body-Drain Diode Reverse

Recovery Time

200

500

50

20

0.1

0.3

3

10

100

30

1

Drain Current

ID (A)

Switching Characteristics

1000

100

10

tr

td(on)

td(off)

tf

Ciss

Coss

Crss

VGS = 0

f = 1 MHz

Tc = –25°C

VGS = 10 V, VDS = 10 V

Rg= 4.7

Ω, duty ≤ 1 %

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