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HAT2215R Datasheet(PDF) 3 Page - Renesas Technology Corp |
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HAT2215R Datasheet(HTML) 3 Page - Renesas Technology Corp |
3 / 8 page HAT2215R, HAT2215RJ Rev.3.00 Dec. 22, 2004 page 3 of 7 Main Characteristics 10 1 0.1 110 100 10 5 05 10 10 5 0 234 5 0.01 100 VGS = 2.8 V Tc = 75 °C 25 °C −25°C Drain to Source Voltage VDS (V) Maximum Safe Operation Area Drain to Source Voltage VDS (V) Typical Output Characteristics Pulse Test Gate to Source Voltage VGS (V) Typical Transfer Characteristics VDS = 10 V Pulse Test 3.4 V 3.2 V 3.0 V 4.5 V 10 V 0.1 0.001 100 µs 1 ms Ta = 25 °C 1 shot Pulse 10 µ s Note 4 DC Operation (PW ≤ 10 s) Operation in this area is limited by RDS(on) Note 4 : When using the glass epoxy board (FR4 40x40x1.6 mm) 500 400 300 200 100 0 510 15 20 0.1 1 10 100 10 ID = 2 A 1 A Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs Gate to Source Voltage Drain Current ID (A) Static Drain to Source on State Resistance vs. Drain Current Pulse Test Pulse Test 0.5 A 100 1000 VGS = 4.5 V 10 V PW = 10 ms (1shot) Ambient Temperature Ta (°C) Power vs. Temperature Derating 4.0 3.0 2.0 1.0 0 50 100 150 200 Test Condition : When using the glass epoxy board (FR4 40x40x1.6 mm), PW < 10 s 2 Drive Operation 1 Drive Operation |
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