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HAT2208R Datasheet(PDF) 3 Page - Renesas Technology Corp

Part # HAT2208R
Description  Silicon N Channel Power MOS FET Power Switching
Download  8 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

HAT2208R Datasheet(HTML) 3 Page - Renesas Technology Corp

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HAT2208R
REJ03G1595-0200 Rev.2.00 Oct 15, 2007
Page 3 of 7
Main Characteristics
Ambient Temperature Ta (
°C)
Power vs. Temperature Derating
4.0
3.0
2.0
1.0
0
50
100
150
200
Test Condition :
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW
≤ 10 s
Drain to Source Voltage VDS (V)
Maximum Safe Operation Area
Note 4 : When using the glass epoxy board
(FR4 40x40x1.6 mm)
100
10
1
0.1
0.01
0.1
0.3
1
3
10
30
100
500
Ta = 25°C
1 shot Pulse
PW
=
10
m
s
10 µ
s
100
µs
Operation in
this area is
limited by R
DS(on)
Note
4
DC
Operation
(PW
≤ 10
s)
1 ms
Drain to Source Voltage VDS (V)
Typical Output Characteristics
10
8
6
4
2
0
2
4
68
10
VGS = 2.6 V
10 V
4.5 V
Pulse Test
2.8 V
Gate to Source Voltage VGS (V)
Typical Transfer Characteristics
10
8
6
4
2
0
12
3
4
5
Tc = 75
°C
25
°C
–25
°C
VDS = 10 V
Pulse Test
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
250
200
150
100
50
0
4
8
12
16
20
Pulse Test
ID = 5 A
2 A
Drain Current ID (A)
Static Drain to Source on State Resistance
vs. Drain Current
20
10
2
5
1
0.1
1
10
100
100
50
VGS = 4.5 V
10 V
Pulse Test
3.0 V


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