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HAT2205C Datasheet(PDF) 4 Page - Renesas Technology Corp |
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HAT2205C Datasheet(HTML) 4 Page - Renesas Technology Corp |
4 / 7 page HAT2205C R07DS1181EJ0500 Rev.5.00 Page 4 of 6 Mar 19, 2014 Case Temperature Tc (°C) Static Drain to Source on State Resistance vs. Temperature Drain Current ID (A) Forward Transfer Admittance vs. Drain Current Drain to Source Voltage VDS (V) Typical Capacitance vs. Drain to Source Voltage Gate Charge Qg (nc) Dynamic Input Characteristics Drain Current ID (A) Switching Characteristics Source to Drain Voltage VSD (V) Reverse Drain Current vs. Source to Drain Voltage –25 0 25 50 75 100 125 150 0 0.1 100 10 1 0.1 3 100 100 80 60 40 20 VGS = 4.5 V 0 12 1000 100 300 40 0 8 30 6 20 4 10 2 2 4 6 8 10 0 1000 100 1 10 30 10 3 1 Ciss Coss Crss 6 0 0.4 0.8 1.2 1.6 2.0 10 4 2 6 8 0.5, 1.5, 3 A ID = 0.5, 1.5, 3 A 5 V 2.5 V 4 2 8 10 10 30 1 0.3 25 °C 75 °C 0.1 3 100 10 30 1 0.3 2.5 V 1.8 V ID = 3 A VGS = 0, –5 V VGS = 4.5 V, VDD = 10 V Rg = 4.7 Ω, Ta = 25°C Tc = –25 °C Pulse Test VDS = 10 V Pulse Test VGS = 0 f = 1 MHz VDD = 5 V 10 V 12 V VDD = 12 V 10 V 5 V tr tf td(off) td(on) Pulse Test 3 A 0.5 A 1.5 A |
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