HSC119 datasheet(2/5 Pages) RENESAS

Part #	HSC119

Description	Silicon Epitaxial Planar Diode for High Speed Switching

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Manufacturer	RENESAS [Renesas Technology Corp]

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HSC119

Rev.1.00, Mar.22.2004, page 2 of 4

Absolute Maximum Ratings

(Ta = 25°C)

Item

Symbol

Value

Unit

Peak reverse voltage

VRM

85

V

Reverse voltage

VR

80

V

Peak forward current

IFM

300

mA

Non-Repetitive peak forward surge current

IFSM *

1

4

A

Average rectified current

IO

100

mA

Junction temperature

Tj

125

°C

Storage temperature

Tstg

–55 to +125

°C

Note:

1. Within 1

µs forward surge current.

Electrical Characteristics

(Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test Condition

VF1

—

0.8

IF = 10 mA

Forward voltage

VF2

—

1.2

V

IF = 100 mA

Reverse current

IR

—

0.1

µA

VR = 80 V

Capacitance

C

—

2.0

pF

VR = 0 V, f = 1 MHz

Reverse recovery time*

1

trr

—

3.0

ns

IF = 10 mA, VR = 6 V, RL = 50

Ω

Note:

1. Reverse recovery time test circuit

3k

Ω

0.1

µF

Ro = 50

Ω

Rin = 50

Ω

DC

Supply

Pulse

Generator

Sampling

Oscilloscope

Trigger

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