HAT3018R datasheet(3/16 Pages) RENESAS

Part #	HAT3018R

Description	Silicon N/P Channel Power MOS FET High Speed Power Switching

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Manufacturer	RENESAS [Renesas Technology Corp]

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HAT3018R, HAT3018RJ

Rev.1.00, Oct.20.2003, page 3 of 15

Electrical Characteristics

• N Channel

(Ta = 25

°C)

Item

Symbol Min

Typ

Max

Unit

Test Conditions

Drain to source breakdown

voltage

V(BR)DSS

60

—

V

ID = 10 mA, VGS = 0

Gate to Source breakdown voltage V(BR)GSS ±20

—

V

IG = ±100

µA, VDS = 0

Zero gate voltage drain current

IDSS

——1

µAVDS = 60 V, VGS = 0

Zero gate voltage

HAT3018R

IDSS

———

µAVDS = 48 V, VGS = 0

drain current

HAT3018RJ IDSS

——10

µA

Ta = 125

°C

Gate to source leak current

IGSS

——±10

µAVGS = ±16 V, VDS = 0

Gate to source cutoff voltage

VGS(off)

1.5

—

2.5

V

VDS = 10 V, ID = 1 mA

Forward transfer admittance

|yfs|6

9.5

—

S

ID = 3 A

Note 5, V

DS = 10 V

Static drain to source on state

RDS(on)

—28

35

m

Ω

ID = 3 A

Note 5, V

GS = 10 V

resistance

RDS(on)

—40

50

m

Ω

ID = 3 A

Note 5, V

GS = 4.5 V

Input capacitance

Ciss

—

1000

—

pF

VDS = 10 V, VGS = 0

Output capacitance

Coss

—

145

—

pF

f = 1 MHz

Reverse transfer capacitance

Crss

—

85

—

pF

Total gate charge

Qg

—

15

—

nC

VDD = 25 V

Gate to source charge

Qgs

—

2

—

nC

VGS = 10 V

Gate to drain charge

Qgd

—

3

—

nC

ID = 6 A

Turn-on delay time

td(on)

—

12

—

ns

VGS = 10 V, ID= 3 A

Rise time

tr

—

10

—

ns

VDD

≅ 30 V

Turn-off delay time

td(off)

—

60

—

ns

RL = 10

Ω

Fall time

tf

—

11

—

ns

RG = 4.7

Ω

Body-drain diode forward voltage

VDF

—

0.82

1.07

V

IF = 6 A, VGS = 0

Note 5

Body-drain diode reverse recovery

time

trr

—

40

—

ns

IF = 6 A, VGS = 0

diF/dt = 100A/ µs

Notes: 5. Pulse test

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