CT40KM-8H_05 datasheet(2/5 Pages) RENESAS

Part #	CT40KM-8H

Description	Nch IGBT for Strobe Flasher

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Manufacturer	RENESAS [Renesas Technology Corp]

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2 / 5 page

CT40KM-8H

Rev.2.00,

Jul. 07,.2005,

page 2 of 4

Electrical Characteristics

(Tj = 25°C)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test conditions

Collector-emitter breakdown voltage

V(BR)CES

450

—

V

IC = 1 mA, VGE = 0 V

Collector-emitter leakage current

ICES

—

10

µA

VCE = 400 V, VGE = 0 V

Gate-emitter leakage current

IGES

—

±0.1

µA

VGE =

±40 V, VCE = 0 V

Gate-emitter threshold voltage

VGE(th)

—

7.0

V

VCE = 10 V, IC = 1 mA

Performance Curves

Gate-Emitter Voltage VGE (V)

Maximum Pulse Collector Current

0

40

80

160

120

200

050

10

20

30

40

CM = 1500

µF

Tc = 70°C

RG = 30

Ω

Single pulse

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