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CT40KM-8H Datasheet(PDF) 2 Page - Renesas Technology Corp |
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CT40KM-8H Datasheet(HTML) 2 Page - Renesas Technology Corp |
2 / 5 page CT40KM-8H Rev.2.00, Jul. 07,.2005, page 2 of 4 Electrical Characteristics (Tj = 25°C) Parameter Symbol Min. Typ. Max. Unit Test conditions Collector-emitter breakdown voltage V(BR)CES 450 — — V IC = 1 mA, VGE = 0 V Collector-emitter leakage current ICES — — 10 µA VCE = 400 V, VGE = 0 V Gate-emitter leakage current IGES — — ±0.1 µA VGE = ±40 V, VCE = 0 V Gate-emitter threshold voltage VGE(th) — — 7.0 V VCE = 10 V, IC = 1 mA Performance Curves Gate-Emitter Voltage VGE (V) Maximum Pulse Collector Current 0 40 80 160 120 200 050 10 20 30 40 CM = 1500 µF Tc = 70°C RG = 30 Ω Single pulse |
Similar Part No. - CT40KM-8H_05 |
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Similar Description - CT40KM-8H_05 |
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