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STTH803G Datasheet(PDF) 3 Page - STMicroelectronics |
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STTH803G Datasheet(HTML) 3 Page - STMicroelectronics |
3 / 6 page 01234 5678 9 10 0 2 4 6 8 10 12 IF(av) (A) P1(W) T δ=tp/T tp δ = 1 δ = 0.5 δ = 0.2 δ = 0.1 δ = 0.05 Fig. 1: Conduction losses versus average current. 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 0.1 1.0 10.0 100.0 VFM(V) IFM(A) Tj=125°C Tj=25°C Tj=75°C Fig. 2: Forward voltage drop versus forward current (maximum values ). 1E-3 1E-2 1E-1 1E+0 0.0 0.2 0.4 0.6 0.8 1.0 tp(s) Zth(j-c)/Rth(j-c) T δ=tp/T tp Single pulse δ = 0.5 δ = 0.2 δ = 0.1 Fig. 3: Relative variation of thermal impedance junction to case versus pulse duration. 0 50 100 150 200 250 300 350 400 450 500 0 10 20 30 40 50 60 70 80 90 100 trr(ns) VR=200V Tj=125°C IF=2*IF(av) IF=IF(av) IF=0.5*IF(av) dIF/dt(A/µs) Fig. 5: Reverse recovery time versus dIF/dt (90% confidence). 0 50 100 150 200 250 300 350 400 450 500 0 2 4 6 8 10 12 14 16 dIF/dt(A/µs) IRM(A) VR=200V Tj=125°C IF=2*IF(av) IF=IF(av) IF=0.5*IF(av) Fig. 4: Peak reverse recovery current versus dIF/dt (90% confidence). 0 50 100 150 200 250 300 350 400 450 500 0.00 0.10 0.20 0.30 0.40 0.50 0.60 S factor VR=200V Tj=125°C dIF/dt(A/µs) Fig. 6: Softness factor versus dIF/dt (typical values). STTH803D/G 3/6 |
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