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HAT1016R-EL-E Datasheet(PDF) 5 Page - Renesas Technology Corp |
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HAT1016R-EL-E Datasheet(HTML) 5 Page - Renesas Technology Corp |
5 / 8 page HAT1016R Rev.7.00 Sep 07, 2005 page 5 of 7 Pulse Width PW (S) Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation) 10 µ 100 µ 1 m 10 m 100 m 1 10 100 1000 10000 10 1 0.1 0.01 0.001 0.0001 D = 1 0.5 0.2 0.1 0.05 0.02 0.01 1shot pulse PDM PW T D = PW T θch – f (t) = γ s (t) • θch – f θch – f = 125°C/W, Ta = 25°C When using the glass epoxy board (FR4 40 × 40 × 1.6 mm) Pulse Width PW (S) Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation) 10 µ 100 µ 1 m 10 m 100 m 1 10 100 1000 10000 10 1 0.1 0.01 0.001 0.0001 D = 1 0.5 0.2 0.1 0.05 0.02 0.01 1shot pulse PDM PW T D = PW T θch – f (t) = γ s (t) • θch – f θch – f = 166°C/W, Ta = 25°C When using the glass epoxy board (FR4 40 × 40 × 1.6 mm) 500 200 100 20 50 10 5 –0.2 –0.5 –1 –2 –5 –10 –0.1 tf tr td(off) td(on) Drain Current ID (A) Switching Characteristics VGS = –4 V, VDD = –10 V PW = 3 µs, duty ≤ 1 % |
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