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HAF2014 Datasheet(PDF) 2 Page - Renesas Technology Corp |
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HAF2014 Datasheet(HTML) 2 Page - Renesas Technology Corp |
2 / 8 page HAF2014 Rev.3.00 Apr 27, 2006 page 2 of 7 Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Value Unit Drain to source voltage VDSS 60 V VGSS 16 V Gate to source voltage VGSS –2.5 V Drain current ID 40 A Drain peak current ID (pulse) Note 1 80 A Body-drain diode reverse drain current IDR 40 A Channel dissipation Pch Note 2 50 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Ta = 25 °C Typical Operation Characteristics Item Symbol Min Typ Max Unit Test Conditions VIH 3.5 — — V Input voltage VIL — — 1.2 V IIH1 — — 100 µA Vi = 8 V, VDS = 0 IIH2 — — 50 µA Vi = 3.5 V, VDS = 0 Input current (Gate non shut down) IIL — — 1 µA Vi = 1.2 V, VDS = 0 IIH (sd) 1 — 0.8 — mA Vi = 8 V, VDS = 0 Input current (Gate shut down) IIH (sd) 2 — 0.35 — mA Vi = 3.5 V, VDS = 0 Shut down temperature Tsd — 175 — °C Channel temperature Gate operation voltage VOP 3.5 — 12 V |
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