HS54097

REJ03G1669-0100 Rev.1.00 Apr 24, 2008

Page 2 of 3

Electrical Characteristics

(Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test conditions

Drain to source breakdown voltage

600

—

—

V

Zero gate voltage drain current

—

—

1

µA

Gate to source leak current

—

—

±0.1

µA

Gate to source cutoff voltage

3

—

5

V

Static drain to source on state

resistance

—

17

25

Ω

Note2

Input capacitance

Ciss

—

50

—

pF

Output capacitance

Coss

—

7.2

—

pF

Reverse transfer capacitance

Crss

—

1.1

—

pF

f = 1 MHz

Turn-on delay time

—

31

—

ns

Rise time

—

14

—

ns

Turn-off delay time

—

54

—

ns

Fall time

—

218

—

ns

Ω

Rg = 10

Ω

Total gate charge

Qg

—

4.5

—

nC

Gate to source charge

Qgs

—

0.5

—

nC

Gate to drain charge

Qgd

—

3.1

—

nC

Body-drain diode forward voltage

—

0.77

1.30

V

Note2

Body-drain diode reverse recovery time

—

240

—

ns

µs

Notes: 2. Pulse test

≥ 600 V), high voltage may be supplied.

Therefore, please be sure to confirm about Electric discharge between Drain terminal and other terminal.