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RJK1525DPF Datasheet(PDF) 4 Page - Renesas Technology Corp |
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RJK1525DPF Datasheet(HTML) 4 Page - Renesas Technology Corp |
4 / 8 page RJK1525DPJ, RJK1525DPE, RJK1525DPF Rev.1.00, Apr.22.2005, page 4 of 7 0.5 0.4 0.3 0.2 0.1 −25 0 25 50 75 100 125 150 0 0.3 0.1 3 30 100 100 30 10 3 1 0.3 0.1 110 Case Temperature Tc ( °C) Static Drain to Source on State Resistance vs. Temperature Drain Current ID (A) Forward Transfer Admittance vs. Drain Current VGS = 10 V Pulse Test 1 3 10 30 100 300 1000 1000 200 500 100 20 50 10 2 5 1 0 50 100 150 30000 10000 100000 1000 3000 240 0 16 180 12 120 8 60 4 4 8 12 16 20 0 1000 100 1 10 0.1 0.3 1 3 10 30 100 300 100 30 10 VGS = 0 f = 1 MHz Ciss Coss Crss ID = 25 A VDS VGS Reverse Drain Current IDR (A) Body-Drain Diode Reverse Recovery Time Drain to Source Voltage VDS (V) Typical Capacitance vs. Drain to Source Voltage Gate Charge Qg (nC) Dynamic Input Characteristics Drain Current ID (A) Switching Characteristics di / dt = 100 A / µs VGS = 0, Ta = 25°C VDD = 120 V 60 V 30 V td(on) td(off) VGS = 10 V, VDD = 75 V PW = 5 µs, duty < 1 % RG = 10 Ω VDD = 30 V 60 V 120 V tr tf ID = 25 A VDS = 10 V Pulse Test 8.5 A 12.5 A Tc = −25°C 25 °C 75 °C tr tf |
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