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RJK0348DSP Datasheet(PDF) 3 Page - Renesas Technology Corp

Part # RJK0348DSP
Description  Silicon N Channel Power MOS FET Power Switching
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RJK0348DSP Datasheet(HTML) 3 Page - Renesas Technology Corp

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RJK0348DSP
REJ03G1644-0201 Rev.2.01 Apr 24, 2008
Page 3 of 6
Main Characteristics
Drain to Source Voltage
VDS (V)
Typical Output Characteristics
Gate to Source Voltage
VGS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Gate to Source Voltage
VGS (V)
Typical Transfer Characteristics
Drain Current
ID
(A)
Static Drain to Source on State Resistance
vs. Drain Current
50
40
30
20
10
0
2
468
10
50
40
30
20
10
0
12
3
4
5
Tc = 75
°C
25
°C
–25
°C
VDS = 10 V
Pulse Test
VGS = 2.6 V
Pulse Test
1
0.3
0.1
30
300
1
10
100
1000
3
200
150
100
50
0
4
8
12
16
20
Pulse Test
ID = 20 A
10 A
10
3
VGS = 4.5 V
10 V
2.7 V
10 V
4.5 V
Pulse Test
5 A
2.8 V
2.9 V
Drain to Source Voltage
VDS (V)
Maximum Safe Operation Area
Note 5 :
When using the glass epoxy board
(FR4 40x40x1.6 mm)
100
10
1
0.1
0.01
0.1
0.3
1
3
10
30
100
500
Ta = 25 °C
1 shot Pulse
PW
= 10
ms
10 µs
100
µs
Operation in
this area is
limited by RDS(on)
Note
5
DC
Operation
(PW
< 10
s)
1 ms
Ambient Temperature Ta (°C)
Power vs. Temperature Derating
4.0
3.0
2.0
1.0
0
50
100
150
200
Test Condition :
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW
≤ 10 s


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