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STTA9012TV1 Datasheet(PDF) 3 Page - STMicroelectronics |
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STTA9012TV1 Datasheet(HTML) 3 Page - STMicroelectronics |
3 / 8 page 0 5 10 15 20 25 30 35 40 45 50 0 20 40 60 80 100 IF(av) (A) P1(W) T δ=tp/T tp δ =1 δ = 0.5 δ = 0.2 δ = 0.1 Fig. 1: Conduction losses versus average current (per diode). 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 1 10 100 500 VFM(V) IFM(A) Tj=125 °C Fig. 2: Forward voltage drop versus forward current (maximum values, per diode). 1E-3 1E-2 1E-1 1E+0 5E+0 0.0 0.2 0.4 0.6 0.8 1.0 tp(s) Zth(j-c)/Rth(j-c) Single pulse δ = 0.5 δ = 0.2 δ = 0.1 Fig. 3: Relative variation of thermal impedance junction to case versus pulse duration (per diode). 0 100 200 300 400 500 0 200 400 600 800 1000 trr(ns) VR=600V Tj=125 °C IF=2*IF(av) IF=IF(av) IF=0.5*IF(av) dIF/dt(A/ µs) Fig. 5: Reverse recovery time versus dIF/dt (90% confidence, per diode). 0 100 200 300 400 500 0 10 20 30 40 50 60 70 80 dIF/dt(A/ µs) IRM(A) VR=600V Tj=125 °C IF=2*IF(av) IF=IF(av) IF=0.5*IF(av) Fig. 4: Peak reverse recovery current versus dIF/dt (90% confidence, per diode). 0 100 200 300 400 500 0.60 0.80 1.00 1.20 1.40 1.60 S factor IF<2*IF(av) VR=600V Tj=125 °C dIF/dt(A/ µs) Fig. 6: Softness factor (tb/ta) versus dIF/dt (typical values). STTA9012TV1/2 3/8 |
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