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RQK0603CGDQSTL-E Datasheet(PDF) 5 Page - Renesas Technology Corp |
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RQK0603CGDQSTL-E Datasheet(HTML) 5 Page - Renesas Technology Corp |
5 / 7 page RQK0603CGDQS Rev.4.00 Jun 22, 2006 page 5 of 6 010 20 30 515 25 1 100 10 1000 –10 –5 0 5 10 0 0.8 0.4 1.2 1.6 2.0 2.0 3.0 2.5 1.5 0.5 1.0 0 0.4 0.2 0.3 0.5 0.7 0.6 0.8 –25 0 25 50 75 100 125 150 0.1 1 10 100 1000 0.01 0.1 1.0 10 150 160 170 180 190 200 210 220 VDS = 0 V f = 1 MHz 1 mA ID = 10 mA VGS = 0 td(off) td(on) tr tf VDD = 10 V VGS = 10 V Rg = 4.7 Ω PW = 5 µs Tc = 25°C VGS = 0 V, –5 V–10 V Pulse Test Tc = 25°C 10 V 5 V VGS = 0 V f = 1 MHz Coss Crss Ciss 0 0.8 1.6 2.4 3.2 4.0 100 80 60 20 40 20 16 12 8 4 ID = 2.8 A Tc = 25°C VDD = 10 V VGS VDS 50 V VDD = 50 V 25 V 10 V 25 V 0 0 Dynamic Input Characteristics Gate Charge Qg (nC) Switching Characteristics Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage Drain to Source Voltage VDS (V) Input Capacitance vs. Gate to Source Voltage Gate to Source Voltage VGS (V) Reverse Drain Current vs. Source to Drain Voltage Source Drain Voltage VSD (V) Body-Drain Diode Forward Voltage vs. Case Temperature Case Temperature Tc ( °C) |
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