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RQK0302GGDQA Datasheet(PDF) 5 Page - Renesas Technology Corp

Part # RQK0302GGDQA
Description  Silicon N Channel MOS FET Power Switching
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RQK0302GGDQA Datasheet(HTML) 5 Page - Renesas Technology Corp

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RQK0302GGDQA
Rev.4.00 Jun 15, 2006 page 5 of 6
Dynamic Input Characteristics
Gate Charge Qg (nC)
Switching Characteristics
Typical Capacitance vs.
Drain to Source Voltage
Drain to Source Voltage VDS (V)
Input Capacitance vs.
Gate to Source Voltage
Gate to Source Voltage VGS (V)
Reverse Drain Current vs.
Source to Drain Voltage
Source to Drain Voltage VSD (V)
Body-Drain Diode Forward Voltage vs.
Case Temperature
Case Temperature Tc (
°C)
Drain Current ID (A)
0
0.8
1.6
2.4
3.2
4.0
100
80
60
20
40
20
16
12
8
4
1
10
100
1000
0.01
0.1
1
10
0
5
10
15
20
25
1
100
1000
190
210
220
230
250
–10
–5
0
5
10
0
0.8
0.4
1.2
1.6
2.0
3
5
4
2
1
0
0.9
0.3
0.4
0.7
0.5
0.6
0.8
–25
0
25
50
75
100 125 150
ID = 2.7 A
Tc = 25°C
VDD =10 V
VDD = 25 V
VDS
VGS
10 V
25 V
0 V, –5V, –10V
Pulse Test
Tc = 25°C
VGS = 10 V
5V
1 mA
VGS = 0
Coss
Crss
0
30
10
VGS = 0 V
f = 1 MHz
240
200
1.0
ID = 10 mA
VDS = 0 V
f = 1 MHz
0
Ciss
td(off)
VDD = 10 V
VGS = 10 V
Rg = 4.7
Ω
PW = 5 µs
Tc = 25°C
td(on)
tr
tf


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