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STTA1212D Datasheet(PDF) 7 Page - STMicroelectronics |
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STTA1212D Datasheet(HTML) 7 Page - STMicroelectronics |
7 / 8 page Turn-on losses : (in the transistor, due to the diode) P5 = VR × IRM 2 × ( 3 + 2 × S ) × F 6 xdIF ⁄ dt + VR × IRM × IL × ( S + 2 ) × F 2 x dIF ⁄ dt Turn-off losses (in the diode) : P3 = VR × IRM 2 × S × F 6 xdIF ⁄ dt Turn-off losses : (with non negligible serial inductance) P3’ = VR × IRM 2 × S × F 6 xdIF ⁄ dt + L × IRM 2 × F 2 P3,P3’ and P5 are suitable for power MOSFET and IGBT Fig. F: TURN-OFF CHARACTERISTICS I F V F V Fp 1.1V F V F F dI /dt 0 0t t I Fmax tfr Fig. G: TURN-ON CHARACTERISTICS Turn-on losses : P4 = 0.4 (VFP -VF). IFmax .tfr .F APPLICATION DATA (Cont’d) dI F /dt = VR /L dI /dt R tb ta I RM V R I V t S = tb/ta trr = ta + tb RECTIFIER OPERATION V I IL t TRANSISTOR dI /dt F dI /dt R tb ta I RM VR DIODE I V t trr = ta + tb S = tb / ta STTA1212D 7/8 |
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