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RJJ0601JPE-00-J3 Datasheet(PDF) 1 Page - Renesas Technology Corp

Part # RJJ0601JPE-00-J3
Description  Silicon P Channel MOS FET High Speed Power Switching
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RJJ0601JPE-00-J3 Datasheet(HTML) 1 Page - Renesas Technology Corp

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REJ03G1603-0100
Rev.1.00
Nov 21, 2007
Page 1 of 6
RJJ0601JPE
Silicon P Channel MOS FET
High Speed Power Switching
REJ03G1603-0100
Rev.1.00
Nov 21, 2007
Features
• Low on-resistance
RDS(on) = 8.2 m
Ω typ.
• Capable of 4.5 V gate drive
• High speed switching
Outline
1
2
3
4
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK(S)-(1) )
1. Gate
2. Drain
3. Source
4. Drain
1
2, 4
3
D
G
S
Absolute Maximum Ratings
(Ta = 25
°C)
Item
Symbol
Value
Unit
Drain to source voltage
VDSS
–60
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
–90
A
Drain peak current
ID (pulse)
Note1
–360
A
Body-drain diode reverse drain current
IDR
–90
A
Avalanche current
IAP
Note3
–40
A
Avalanche energy
EAR
Note3
137
mJ
Channel dissipation
Pch
Note2
90
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25
°C
3. Value at Tch = 25
°C, Rg ≥ 50 Ω
Thermal Impedance Characteristics
• Channel to case thermal impedance θch-c: 1.39°C/W


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