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RD151TS3312ARP Datasheet(PDF) 5 Page - Renesas Technology Corp |
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RD151TS3312ARP Datasheet(HTML) 5 Page - Renesas Technology Corp |
5 / 9 page RD151TS3312ARP, RD151TS3322ARP Rev.1.00 May 11, 2006 page 5 of 8 Application Information 1. Recommended Circuit Configuration The power supply circuit of the optimal performance on the application of a system should refer to Figure 2. VDD decoupling is important to both reduce Jitter and EMI radiation. The C1 decoupling capacitor should be placed as close to the VDD pin as possible, otherwise the increased trace inductance will negate its decoupling capability. 8 1 7 SSCOUT 6 SEL SSN 5 2 3 4 XIN XOUT R1 C1 C2 GND GND GND VDD (Crystal or Reference input) (Crystal or Not connection) NC Notes: C1 = High frequency supply decoupling capacitor. (0.1 µF recommended) C2 = Low frequency supply decoupling capacitor. (22 µF recommended) R1 = Match value to line impedance. Figure 2 Recommended circuit configuration |
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