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STT818B Datasheet(PDF) 2 Page - STMicroelectronics |
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STT818B Datasheet(HTML) 2 Page - STMicroelectronics |
2 / 5 page THERMAL DATA Rthj-amb (1) Thermal Resistance Junction-ambient Max 104.2 oC/W (1) Package mounted on FR4 pcb 25mm x 25mm. ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit ICBO Collector Cut-off Current (IE = 0) VCB = -30 V VCB = -30 V TC = 125 oC -0.1 -20 µA µA IEBO Emitter Cut-off Current (IC = 0) VEB = -5 V -0.1 µA V(BR)CEO ∗ Collector-Emitter Breakdown Voltage (IB = 0) IC = -10 mA -30 V VCE(sat) ∗ Collector-Emitter Saturation Voltage IC = -0.5 A IB = -5 mA IC = -2 A IB = -20 mA IC = -1.2 A IB = -20 mA -0.075 -0.21 -0.15 -0.5 -0.25 V V V VBE(sat) ∗ Base-Emitter Saturation Voltage IC = -0.5 A IB = -5 mA IC = -1.2 A IB = -20 mA IC = -2 A IB = -20 mA -0.74 -1.1 -1.1 -1.2 V V V VBE(ON) ∗ Base-Emitter Voltage IC = -0.5 A VCE = -2 V -0.71 -1.1 V hFE ∗ DC Current Gain IC = -0.5 A VCE = -1 V IC = -2.5 A VCE = -3 V 100 100 * Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. Safe Operating Area Derating Curve STT818B 2/5 |
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