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HRL0103C Datasheet(PDF) 2 Page - Renesas Technology Corp

Part # HRL0103C
Description  Silicon Schottky Barrier Diode for Rectifying
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

HRL0103C Datasheet(HTML) 2 Page - Renesas Technology Corp

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HRL0103C
REJ03G0367-0300 Rev.3.00 Apr 08, 2008
Page 2 of 5
Absolute Maximum Ratings
(Ta = 25
°C)
Item
Symbol
Value
Unit
Peak reverse voltage
VRM *
1
30
V
Reverse voltage
VR
30
V
Average rectified current
IO *
1
100
mA
Peak forward surge current
IFM
300
mA
Non-Repetitive peak forward surge current
IFSM *
2
1
A
Junction temperature
Tj
125
°C
Storage temperature
Tstg
−55 to +125
°C
Notes: 1. See from Fig.3 to Fig.5.
2. 10 ms sine wave 1 pulse.
Electrical Characteristics
(Ta = 25
°C)
Item
Symbol
Min
Typ
Max
Unit
Test Condition
VF1
0.40
V
IF = 10 mA
Forward voltage
VF2
0.60
V
IF = 100 mA
IR1
0.1
VR = 5 V
Reverse current
IR2
0.2
μA
VR = 10 V
Capacitance
C
8.0
pF
VR = 0.5 V, f = 1 MHz
Thermal resistance
Rth(j-a)
800
°C/W
Polyimide board *
1
Notes
: 1. Polyimide board
Unit: mm
1.0
20h
×15w×0.8t
0.3
2. For EFP package, the material of lead is exposed for cutting plane. There for, soldering nature of lead tip
part is considered as unquestioned. Please kindly consider soldering nature.


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