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STSJ2NM60 Datasheet(PDF) 2 Page - STMicroelectronics |
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STSJ2NM60 Datasheet(HTML) 2 Page - STMicroelectronics |
2 / 8 page STSJ2NM60 2/8 THERMAL DATA ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF ON (1) DYNAMIC Rthj-c Thermal Resistance Junction-case Max 1.78 °C/W Rthj-amb Thermal Resistance Junction-ambient Max (1) 42 °C/W Tj Max. Operating Junction Temperature 150 °C Tstg Storage Temperature – 65 to 150 °C Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown Voltage ID = 1 mA, VGS = 0 600 V IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating 1µA VDS = Max Rating, TC = 125 °C 10 µA IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 20V ±5 µA Symbol Parameter Test Conditions Min. Typ. Max. Unit VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA 34 5 V RDS(on) Static Drain-source On Resistance VGS = 10 V, ID = 1 A 2.8 3.2 Ω Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (4) Forward Transconductance VDS > ID(on) x RDS(on)max, ID = 2 A 1.4 S Ciss Input Capacitance VDS = 25 V, f = 1 MHz, VGS = 0 160 pF Coss Output Capacitance 67 pF Crss Reverse Transfer Capacitance 4pF RG Gate Input Resistance f=1 MHz Gate DC Bias = 0 Test Signal Level = 20mV Open Drain 3.5 Ω |
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