2SJ528STL-E datasheet(4/9 Pages) RENESAS

Part #	2SJ528STL-E

Description	Silicon P Channel MOS FET

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Manufacturer	RENESAS [Renesas Technology Corp]

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4 / 9 page

2SJ528(L), 2SJ528(S)

Rev.3.00 Sep 07, 2005 page 4 of 8

0.5

–40

0

40

80

120

160

Case Temperature

Tc (°C)

0

0.1

0.2

0.3

0.4

Static Drain to Source on State Resistance

vs. Temperature

Pulse Test

ID = –5 A

ID = –7 A

–1 A, –2 A

Forward Transfer Admittance vs.

Drain Current

Drain Current ID (A)

100

30

3

10

0.3

1

0.1

–0.1

–0.3

–1

–3

–30

–10

–100

Tc = –25°C

75°C

VDS = –10 V

Pulse Test

25°C

Reverse Drain Current

IDR (A)

Body-Drain Diode Reverse

Recovery Time

–0.1 –0.2

–0.5 –1

–2

–5

–20

–10

500

200

50

100

20

5

10

di / dt = 50 A /

µs

VGS = 0, Ta = 25°C

0

–10

–20

–30

–40

–50

Drain to Source Voltage VDS (V)

Typical Capacitance vs.

Drain to Source Voltage

5000

1000

2000

200

500

100

20

50

10

Ciss

Coss

Crss

VGS = 0

f = 1 MHz

0

Gate Charge

Qg (nc)

0

–20

–16

–12

–8

–4

–100

–80

–60

–40

–20

Dynamic Input Characteristics

816

24

32

40

VDS

VGS

1000

100

300

30

3

10

1

–0.3

–1

–3

–10 –20

–0.1

tf

tr

td(off)

td(on)

Drain Current

ID (A)

Switching Characteristics

VDD = –10 V

–25 V

–50 V

VDD = –10 V

–25 V

–50 V

–10 V

VGS = –4 V

–2 A

–1 A

–5 A

VGS = –10 V, VDD = –30 V

PW = 5

µs, duty ≤ 1 %

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2SJ528STL-E Datasheet(PDF) 4 Page - Renesas Technology Corp

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